electronics

A little more than half of the world’s population enjoy benefits of information technology which is enabled by complementary metal oxide semiconductor (CMOS) electronics. Going forward, we will enjoy further augmentation of quality of life through integrated CMOS electronic systems consisting of logic, memory, communication devices, energy storage and harvester, power management units, sensors and actuators. Their main attributes will include but not limited to high performance and storage capacity for data management; seamless connectivity; energy efficiency; hyper-scale integration density; appropriate functionalities based on their applications and operational environment; reliability and safety; and finally affordability and simplicity to expand their user base to include those who do not have any access to them today. Even using last fifty years’ wealth of knowledge and experience, such integrated electronic system development and deployment is a monumental engineering challenge. From that perspective, redesigning CMOS electronics might seem to be an overly ambitious goal specially, if that means transformation of such physically rigid complex electronic systems into a fully flexible one. To address this intriguing challenge, we have developed a unique coin like architecture based soft singular platform, which can be used as the building block of standalone fully flexible CMOS electronic system with all the aforementioned characteristics. We have devised an effective heterogeneous integration strategy based on mature and reliable CMOS technology only to integrate hybrid materials and diverse set of devices for multi-disciplinary applications. These will be the focus of this talk.

The fourth wave: ultrawide bandgap compound semiconductors for photonics and electronics

Xiaohang Li, Assistant Professor, Electrical and Computer Engineering

-

KAUST

Wide bandgap (WBG) compound semiconductors including GaN have shown enormous success in solid-state lighting, display, and electrification in recent decades due to superior properties such as direct bandgap, high electron mobility, and large breakdown field. They have been changing the world by elevating living standards and addressing grand challenges such as global warming. The pioneering researchers have been recognized by numerous accolades including the Nobel Prize and most recently, the Queen Elizabeth Prize. Lately, the III-nitride and III-oxide ultrawide bandgap (UWBG) compound semiconductors with bandgap larger than 3.4 eV have attracted increasing attentions: they have been regarded as the 4th wave/generation after the consequential Si, III-V, and WBG semiconductors. Because the UWBG along with other properties could enable electronics and photonics to operate with significantly greater power and frequency capability and at much shorter far−deep UV wavelengths, respectively, both crucial for human society. Besides, they could be employed for the revolutionary quantum information science as the host and photonic platform. However, extensive multi-disciplinary studies of growth, materials, physics, and devices are essential to unearth the potentials due to the infancy. This seminar would cover the latest research on those aspects. It includes growth of state-of-the-art materials, discovery of unique material properties, and development of a widely adopted device physics framework for photonics and electronics especially short and long wavelength photonic devices.