wide bandgap semiconductor

Ultra-Wide Bandgap Semiconductors for Future of Moore’s Law

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This colloquium will discuss the latest material, device and high density IC research based on ultra-wide bandgap semiconductors for the future of Moore’s Law at the Advanced Semiconductor Laboratory (ASL) at King Abdullah University of Science and Technology (KAUST).

Xiaohang Li

Professor Li is a leading scholar in the research of (ultra)wide bandgap semiconductors and high density stacked transistor IC that are bringing revolutionary impacts on the optoelectronic and electronic industries.

Kuang-Hui Li

Kuang-Hui Li joined Photonics Laboratory at King Abdullah University of Science and Technology (KAUST) in the Fall of 2018. He obtained two bachelor degrees (2011) in Electro-Physics and Applied-Math from National Chiao Tung University, Taiwan. Research Interest Kuang's research interests include Semiconductor epitaxy by MBE, MOCVD, and PLD, Material characterization, e.g. HRXRD, TEM/STEM, RBS, Nanofabrication processes, Semiconductor optoelectronics devices (LED, Photodetector, Laser). His current research focuses on III-oxide material and heterostructures for device applications such as UV