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Metal-GaN interfaces
PhD Dissertation Defense - Interface engineering for GaN HEMTs
Chuanju Wang, Ph.D. Student, Electrical and Computer Engineering
Feb 26, 17:00
-
19:00
B3 L5 R5209
GaN-based electronics
Metal-GaN interfaces
Dielectric-GaN interfaces
The research focuses on improving metal-GaN and dielectric-GaN interfaces for high-performance GaN-based electronics. For metal-GaN, the damage caused by e-beam evaporation was mitigated using Ti3C2Tx MXene films, achieving a record ION/IOFF current of 1013 and low subthreshold swing.
