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Fabrication and Characterization

Fabrication and Characterization of GaN-Based Superluminescent Diode for Solid-State Lighting and Visible Light Communication

Abdullah A. Alatawi, Ph.D. Student, Electrical and Computer Engineering
Apr 2, 16:00 - 18:00

KAUST

Fabrication and Characterization solid-state lighting Visible light communications

This dissertation is devoted to the fabrication and electrical and optical characterization of a new class of III-nitride light-emitter known as superluminescent diode (SLD). SLD works in an amplified spontaneous emission (ASE) regime, and it combines several advantages from both LD and LED, such as droop-free, speckle-free, low-spatial coherence, broader emission, high-optical power, and directional beam. Here, SLDs were fabricated by a focused ion beam by tilting the front facet of the waveguide to suppress the lasing mode. They showed a high-power of 474 mW on c-plane GaN-substrate with a large spectral bandwidth of 6.5 nm at an optical power of 105 mW. To generate SLD-based white light, a YAG-phosphor-plate was integrated, and a CRI of 85.1 and CCT of 3392 K were measured. For the VLC link, SLD showed record high-data rates of 1.45 Gbps and 3.4 Gbps by OOK and DMT modulation schemes, respectively. Additionally, a widely single- and dual-wavelength tunability were designed using SLD-based external cavity (SLD-EC) configuration for a tunable blue laser source.

Electrical and Computer Engineering (ECE)

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